Papers Selected from the 4th International SiGe Technology and Device Meeting (ISTDM 2008)CALLEJA, E; CRISTOLOVEANU, S; ZASLAVSKY, A et al.Solid-state electronics. 2009, Vol 53, Num 8, issn 0038-1101, 108 p.Conference Proceedings

Si and SiGe faceting during selective epitaxyPRIBAT, Clément; SERVANTON, Germain; DEPOYAN, Linda et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 865-868, issn 0038-1101, 4 p.Conference Paper

Spectral responsivity of fast Ge photodetectors on SOIKASCHEL, M; OEHME, M; KIRFEL, O et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 909-911, issn 0038-1101, 3 p.Conference Paper

Investigation of interface characteristics in strained-Si nMOSFETsCHENG WEN KUO; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 897-900, issn 0038-1101, 4 p.Conference Paper

Microstructures in directly bonded Si substratesOHARA, Y; UEDA, T; TAJIRI, H et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 837-840, issn 0038-1101, 4 p.Conference Paper

A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration techniqueHUANG, Ji-Chen; LAI, Kuang-Sheng; HSU, Klaus Y. J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 916-919, issn 0038-1101, 4 p.Conference Paper

Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structuresABBADIE, A; ALLIBERT, F; BRUNIER, F et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 850-857, issn 0038-1101, 8 p.Conference Paper

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGeYAMAMOTO, Yuji; KÖPKE, Klaus; WEIDNER, Günter et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 824-827, issn 0038-1101, 4 p.Conference Paper

Low-frequency noise in buried-channel SiGe n-MODFETsMADAN, Anuj; CRESSLER, John D; KOESTER, Steven J et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 901-904, issn 0038-1101, 4 p.Conference Paper

New method to calibrate the pattern dependency of selective epitaxy of SiGe layersKOLAHDOUZ, M; MARESCA, L; OSTLING, M et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 858-861, issn 0038-1101, 4 p.Conference Paper

A selective epitaxy collector module for high-speed Si/SiGe:C HBTsGEYNET, B; CHEVALIER, P; CHANTRE, A et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 873-876, issn 0038-1101, 4 p.Conference Paper

Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silicaADNANE, Bouchaib; LAI, Yi-Fan; SHIEH, Jia-Min et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 862-864, issn 0038-1101, 3 p.Conference Paper

High temperature antimony ion implantation in strained silicon-on-insulatorBUCA, D; HEIERMANNA, W; TRINKAUSA, H et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 828-832, issn 0038-1101, 5 p.Conference Paper

Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidationDONG WANG; NAKASHIMA, Hiroshi.Solid-state electronics. 2009, Vol 53, Num 8, pp 841-849, issn 0038-1101, 9 p.Conference Paper

The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETsCHENG, C. Y; FANG, Y. K; LIAO, J. C et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 892-896, issn 0038-1101, 5 p.Conference Paper

3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESLWANG, Wei-Ching; CHANG, Shu-Tong; HUANG, Jacky et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 880-887, issn 0038-1101, 8 p.Conference Paper

Epitaxial growth of Gd₂O₃ on surfactant-mediated grown Ge films on Si(0 0 1 ) substratesWIETLER, T. F; LAHA, A; BUGIEL, E et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 833-836, issn 0038-1101, 4 p.Conference Paper

DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing techniqueHAU YU LIN; SAN LEIN WU; SHOOU JINN CHANG et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 905-908, issn 0038-1101, 4 p.Conference Paper

Molecular approaches to p- and n-nanoscale doping of Ge_1-ySn_y semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS deviceFU, Chung-Hao; CHANG-LIAO, Kuei-Shu; TSAI, Kuen-Hong et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 888-891, issn 0038-1101, 4 p.Conference Paper

Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTsODA, Katsuya; MIURA, Makoto; SHIMAMOTO, Hiromi et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 869-872, issn 0038-1101, 4 p.Conference Paper

Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(1 0 0) by ultraclean low-pressure CVD systemTANNO, Hiroki; SAKURABA, Masao; TILLACK, Bernd et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 877-879, issn 0038-1101, 3 p.Conference Paper

Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Sh_1-xGe_x/Si(100) heterostructureSEO, Takahiro; TAKAHASHI, Kuniaki; SAKURABA, Masao et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 912-915, issn 0038-1101, 4 p.Conference Paper